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TSF16N65M Datasheet Preview

TSF16N65M Datasheet

N-Channel MOSFET

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TSF16N65M pdf
TSF16N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 16A,650V,Max.RDS(on)=0.5 Ω @ VGS =10V
• Low gate charge(typical 50nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
IAR
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25
TC = 100
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive avalanche current
(Note 1)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Value
650
± 30
16*
10.1*
64*
698
4
16
40
-55 to +150
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
Value
3.13
62.5
Units
V
V
A
A
A
mJ
mJ
A
W
Units
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



Truesemi
Truesemi

TSF16N65M Datasheet Preview

TSF16N65M Datasheet

N-Channel MOSFET

No Preview Available !

TSF16N65M pdf
Electrical Characteristics TC=25 unless otherwise specified
Symbol
Parameter
Test Conditions
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 8A
Min Typ Max Units
3 -- 5 V
-- 0.4 0.5
gfs Forward transfer conductance(note 3) VDS = 10 V, ID = 8A (Note 3)
--
11
--
S
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA
VDS = 650 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
VDS = 520 V, TC =125
IGSSF Gate-Body Leakage Current,Forward VGS = 30 V, VDS = 0 V
IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V
Dynamic Characteristics
650
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 16A,
RG = 25 Ω
(Note 3,4)
VDS = 520 V, ID = 16A,
VGS = 10 V
(Note 3,4)
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 16A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS =16A, VGS = 0 V
diF/dt = 100 A/μs (Note 3,4)
--
--
--
--
--
--
--
--
--
--
--
--
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=5mH, IAS=16A, VDD=50V, RG=25Ω, Starting TJ=25
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
-- --
-- 1
-- 100
-- 100
-- -100
3325
225
22
--
--
--
175 --
121 --
373 --
64 --
50 55
20 --
10 --
-- 16
-- 64
-- 1.4
484 --
1.62 --
V
uA
nA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


Part Number TSF16N65M
Description N-Channel MOSFET
Maker Truesemi
Total Page 7 Pages
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