http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Truesemi
Truesemi

TSI7N60M Datasheet Preview

TSI7N60M Datasheet

N-Channel MOSFET

No Preview Available !

TSI7N60M pdf
TSB7N60M/TSI7N60M
600V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
• 7.0A,600V,Max.RDS(on)=1.3 Ω @ VGS =10V
• Low gate charge(typical 29nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TSB7N60M
TSI7N60M
TO-263
TO-262
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
VDSS
VGS
ID
IDM
EAS
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC = 25
TC = 100
Pulsed Drain Current
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
TSB7N60M TSI7N60M
600
± 30
7.0 7.0*
4.2 4.2*
28 28*
245
14.7
4.5
147 48
1.17 0.38
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
TSB7N60M TSI7N60M
0.85 2.6
0.5 --
62.5 62.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com



Truesemi
Truesemi

TSI7N60M Datasheet Preview

TSI7N60M Datasheet

N-Channel MOSFET

No Preview Available !

TSI7N60M pdf
Electrical Characteristics TC=25 unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 3.5 A
gFS Forward transconductance
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS Zero Gate Voltage Drain Current
VGS=20V,ID=3.5A
VGS = 0 V, ID = 250 uA
ID = 250 uA, Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
IGSSF Gate-Body Leakage Current,Forward VGS = 30 V, VDS = 0 V
IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V
2.0
--
--
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 7.0A,
RG = 25 Ω
(Note 4,5)
VDS = 480 V, ID = 7.0A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS =7.0A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=10mH, IAS=7.0A, VDD=50V, RG=25 Ω,Starting TJ=25
3. ISD≤7.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25
4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
--
--
--
--
--
Typ Max Units
-- 4.5
1.05 1.3
8.5 --
V
S
-- -- V
0.7 -- V/
-- 1 uA
-- 10 uA
-- 100 nA
-- -100 nA
1000
110
12.6
--
--
--
pF
pF
pF
20 --
50 --
80 --
70 --
29 --
4.7 --
12.5 --
ns
ns
ns
ns
nC
nC
nC
-- 7.0
-- 28
-- 1.5
320 --
3.0 --
A
V
ns
uC
© 2015 Truesemi Semiconductor Corporation
Ver.B1
www.truesemi.com


Part Number TSI7N60M
Description N-Channel MOSFET
Maker Truesemi
Total Page 9 Pages
PDF Download
TSI7N60M pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 TSI7N60M N-Channel MOSFET Truesemi
Truesemi
TSI7N60M pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components