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QM3010K Datasheet Preview

QM3010K Datasheet

N-Ch 30V Fast Switching MOSFETs

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QM3010K pdf
QM3010K
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3010K is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3010K meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
30V
RDSON
55m
ID
3.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
SOT23 Pin Configuration
D
Absolute Maximum Ratings
G
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
PD@TA=70
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Total Power Dissipation3
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
S
Rating
10s Steady State
30
±20
4 3.5
3.2 2.8
14
1.32 1
0.84 0.64
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Typ.
---
---
---
Max.
125
95
80
Unit
/W
/W
/W
Rev A.04 D042111
1



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UBIQ

QM3010K Datasheet Preview

QM3010K Datasheet

N-Ch 30V Fast Switching MOSFETs

No Preview Available !

QM3010K pdf
QM3010K
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=3A
VGS=4.5V , ID=2A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=3A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=3A
VDD=15V , VGS=10V , RG=3.3Ω
ID=3A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.016
45
60
1.5
-3.04
---
---
---
6.7
2.3
2.73
0.82
1.02
0.8
17
8.8
17.6
220
38
32
Max.
---
---
55
75
2.5
---
1
5
±100
---
4.6
3.82
1.15
1.43
1.6
30.6
17.6
35.2
308.0
53.2
44.8
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=3A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
7.5
1.5
Max.
3.5
14
1
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The power dissipation is limited by 150junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
nS
nC
2


Part Number QM3010K
Description N-Ch 30V Fast Switching MOSFETs
Maker UBIQ
Total Page 4 Pages
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