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QM4302S Datasheet Preview

QM4302S Datasheet

N-Ch and P-Ch Fast Switching MOSFETs

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QM4302S pdf
QM4302S
N-Ch and P-Ch Fast Switching MOSFETs
General Description
The QM4302S is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
The QM4302S meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
40V
-40V
RDSON
15m
32m
ID
11.6A
-8.6A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating
N-Ch
P-Ch
40 -40
±20
±20
11.6 -8.6
9 -6.7
23 -17
69 76
25 -28.6
3.5 3.5
-55 to 150
-55 to 150
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
85
36
Unit
/W
/W
Rev A.01 D043010



UBIQ
UBIQ

QM4302S Datasheet Preview

QM4302S Datasheet

N-Ch and P-Ch Fast Switching MOSFETs

No Preview Available !

QM4302S pdf
QM4302S
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=8A
VGS=4.5V , ID=6A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=8A
VDS=0V , VGS=0V , f=1MHz
VDS=20V , VGS=4.5V , ID=8A
VDD=12V , VGS=10V , RG=3.3Ω
ID=6A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.034
12
16
1.5
-5.64
---
---
---
20
2.1
10.7
3.3
4.2
8.6
3.4
24.8
2.2
1314
120
88
Max.
---
---
15
20
2.5
---
1
5
±100
---
4.2
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Diode Characteristics
Conditions
VDD=25V , L=0.1mH , IAS=20A
Min.
45
Typ.
---
Max.
---
Unit
mJ
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
11.6
23
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2


Part Number QM4302S
Description N-Ch and P-Ch Fast Switching MOSFETs
Maker UBIQ
Total Page 7 Pages
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