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P0303BV Datasheet Preview

P0303BV Datasheet

N-Channel Enhancement Mode MOSFET

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P0303BV pdf
P0303BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID
20A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
20
16
80
Avalanche Current
IAS 74
Avalanche Energy
L = 0.1mH
EAS
278
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.1
1.4
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
57 °C / W
Ver 1.0
1 2013-3-11



UNIKC
UNIKC

P0303BV Datasheet Preview

P0303BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P0303BV pdf
P0303BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (Tj = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 70 °C
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
30
1 1.6 3.0
V
±100 nA
1
mA
10
2.9 4
2.1 3
82 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
4900
897
725
1
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
VDS = 0.5V(BR)DSS, VGS = 10V,
Qgs ID = 20A
Qgd
102
15
26
Turn-On Delay Time2
td(on)
70
Rise Time2
tr VDS = 15V,
150
Turn-Off Delay Time2
td(off)
ID @ 20A, VGS = 10V, RGEN = 6Ω
43
Fall Time2
tf
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Tj = 25 °C)
nC
nS
Continuous Current
Is
Forward Voltage1
VSD
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
IF = 20A, VGS = 0V
IF = 20A, dI/dt=100A/ms
20
1
37
26
A
V
nS
nC
Ver 1.0
2 2013-3-11


Part Number P0303BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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