http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





UTC
UTC

60N05 Datasheet Preview

60N05 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

60N05 pdf
UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
60A, 50V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s
advanced technology to provide the customers with perfect RDS(ON),
high switching speed, high current capacity and low gate charge.
The UTC 60N05 is suitable for motor control, AC-DC or DC-DC
converters and audio amplifiers, etc.
„ FEATURES
* RDS(ON)=12m@ VGS=10V,ID=30A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 130nC)
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N05L-TA3-T
60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-716.a



UTC
UTC

60N05 Datasheet Preview

60N05 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

60N05 pdf
60N05
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS 50 V
Drain-Gate Voltage (RGS=20k ) VDGR 50 V
Gate-Source Voltage
VGSS ±20 V
Drain Current
Continuous
TC=25°C
TC=100°C
ID
60 A
50 A
Pulsed (Note 1)
IDM
240 A
Avalanche Current
Avalanche Energy
IAR 60 A
EAS 600 mJ
EAR 150 mJ
Power Dissipation
Junction Temperature
PD 125 W
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=Max Rating, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
MIN TYP MAX UNIT
60 V
250 µA
+100 nA
-100 nA
234 V
0.012 0.014
3900
950
250
pF
pF
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-716.a


Part Number 60N05
Description N-CHANNEL POWER MOSFET
Maker UTC
Total Page 3 Pages
PDF Download
60N05 pdf
Download PDF File
60N05 pdf
View for Mobile






Related Datasheet

1 60N03 Power MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor
60N03 pdf
2 60N03 N-Channel Enhancement Mode Power MOSFET Anachip
Anachip
60N03 pdf
3 60N03 N-Ch 30V Fast Switching MOSFETs Cmos
Cmos
60N03 pdf
4 60N035 N-Channel Field Effect Transistor ETC
ETC
60N035 pdf
5 60N03GP AP60N03GP Advanced Power Electronics
Advanced Power Electronics
60N03GP pdf
6 60N03L-10 ST60N03L-10 STMicroelectronics
STMicroelectronics
60N03L-10 pdf
7 60N03S AP60N03S Advanced Power Electronics
Advanced Power Electronics
60N03S pdf
8 60N05 N-CHANNEL POWER MOSFET UTC
UTC
60N05 pdf
9 60N05 N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor
60N05 pdf




Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components