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X1049A Datasheet Preview

X1049A Datasheet

HIGH GAIN TRANSISTOR

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X1049A pdf
UNISONIC TECHNOLOGIES CO., LTD
X1049A
NPN SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
„ FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
X1049AL-TF3-T
X1049AG-TF3-T
X1049AL-TF2-T
X1049AG-TF2-T
X1049AL-T92-B
X1049AG-T92-B
X1049AL-T92-K
X1049AG-T92-K
Package
TO-220F
TO-220F2
TO-92
TO-92
Pin Assignment
123
BCE
BCE
EBC
EBC
Packing
Tube
Tube
Tape Box
Bulk
„ MARKING
TO-220F / TO-220F2
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-061.E



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X1049A Datasheet Preview

X1049A Datasheet

HIGH GAIN TRANSISTOR

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X1049A pdf
X1049A
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
80
25
V
V
Emitter-Base Voltage
Collector Current
DC
Pulse
VEBO
IC
5
4
20
V
A
A
Base Current
IB 500 mA
TO-220F
2
Power Dissipation (TA=25°C)
TO-220F2
PD
2.1 W
TO-92
1
Junction Temperature
TJ 125 °C
Operating Temperature
Storage Temperature
TOPR
TSTG
-20 ~ +85
-40 ~ +150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO IC=100μA
Collector-Emitter Breakdown Voltage
VCEO IC=10mA
Collector-Emitter Breakdown Voltage
VCES IC=100μA
Collector-Emitter Breakdown Voltage
VCEV IC=100μA, VEB=1V
Emitter-Base Breakdown Voltage
VEBO IE=100μA
Collector Cut-Off Current
ICBO VCB=50V
Emitter Cut-Off Current
IEBO VEB=4V
Collector Emitter Cut-Off Current
ICES
VCES=50V
IC=0.5A, IB=10mA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=1A, IB=10mA
IC=2A, IB=10mA
IC=4A, IB=50mA
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
IC=10mA, VCE=2V
IC=0.5A, VCE=2V
DC Current Gain (Note)
hFE IC=1A, VCE=2V
IC=4A, VCE=2V
IC=20A, VCE=2V
Transition Frequency
fT IC=50mA, VCE=10V, f=50MHz
Output Capacitance
COBO VCB=10V, f=1MHz
Turn-On Time
tON IC=4A, IB=40mA, VCC=10V
Turn-Off Time
tOFF IC=4A, IB=±40mA, VCC=10V
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle 2%
MIN TYP MAX UNIT
80 120
V
25 35
V
80 120
V
80 120
V
5 8.75
V
0.3 10 nA
0.3 10 nA
0.3 10 nA
30 70
60
125
130
280
mV
155 400
890 980 mV
820 920 mV
250 430
300 450
300 450 1200
200 350
7
180 MHz
45 60 pF
125 ns
380 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-061.E


Part Number X1049A
Description HIGH GAIN TRANSISTOR
Maker UTC
Total Page 4 Pages
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