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Unisonic Technologies
Unisonic Technologies

9012 Datasheet Preview

9012 Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

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9012 pdf
UNISONIC TECHNOLOGIES CO., LTD
9012
PNP SILICON EPITAXIAL TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9012L-x-T92-B
9012G-x-T92-B
9012L-x-T92-K
9012G-x-T92-K
Note: Pin Assignment: B: Base E: Emitter C: Collector
1
TO-92
Package
TO-92
TO-92
Pin Assignment
123
EBC
EBC
Packing
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-92
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
1 of 3
QW-R201-029.B



Unisonic Technologies
Unisonic Technologies

9012 Datasheet Preview

9012 Datasheet

PNP SILICON EPITAXIAL TRANSISTOR

No Preview Available !

9012 pdf
9012
PNP SILICON EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
-40
-20
V
V
Emitter-base voltage
Collector current
VEBO
IC
-5
-500
V
mA
Collector dissipation
Junction Temperature
PC 625 mW
TJ 150 C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE(on)
TEST CONDITIONS
IC=-100μA,IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
MIN TYP MAX UNIT
-40 V
-20 V
-5 V
-100 nA
-100 nA
64 120 300
40 90
-0.18 -0.6 V
-0.95 -1.2 V
-0.6 -0.67 -0.7 V
CLASSIFICATION OF hFE1
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-029.B


Part Number 9012
Description PNP SILICON EPITAXIAL TRANSISTOR
Maker Unisonic Technologies
Total Page 3 Pages
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