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Vishay Intertechnology Electronic Components Datasheet

SUP90N04-3m3P Datasheet

N-Channel 40V (D-S) MOSFET

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SUP90N04-3m3P pdf
SUP90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0033 at VGS = 10 V
0.0041 at VGS = 4.5 V
ID (A)d
90
90
Qg (Typ.)
87
TO-220AB
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• DC/DC Converter
D
GDS
Top View
Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
90d
90d
160
60
180
125b
3.1
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10
Symbol
RthJA
RthJC
Limit
40
1
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SUP90N04-3m3P Datasheet

N-Channel 40V (D-S) MOSFET

No Preview Available !

SUP90N04-3m3P pdf
SUP90N04-3m3P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = 40 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 22 A
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
gfs VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
40
1
50
Typ.
Max.
2.5
± 250
1
50
250
0.0027
0.0034
169
0.0033
0.0041
Unit
V
nA
µA
A
Ω
S
5286
705
283
87 131
15.3
12.2
0.5 2.7 5.4
11 20
7 14
45 68
7 14
pF
nC
Ω
ns
0.72
42
2.5
52
90
160
1.2
63
3.8
78
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65902
S10-0632-Rev. A, 22-Mar-10


Part Number SUP90N04-3m3P
Description N-Channel 40V (D-S) MOSFET
Maker Vishay
Total Page 6 Pages
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