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Vishay Intertechnology Electronic Components Datasheet

SUP90N06-05L Datasheet

N-Channel 60-V (D-S) MOSFET

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SUP90N06-05L pdf
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SUP90N06-05L
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0049 @ VGS = 10 V
0.0055 @ VGS = 4.5 V
TO-220AB
ID (A)
90 a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
APPLICATIONS
D Automotive Such As
High-Side Switch
Motor Drives
12-V Battery
D Synchronous Rectification
D
DRAIN connected to TAB
G
GD S
Top View
Ordering Information: SUP90N06-05L—E3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
ID
IDM
IAS
EAS
PD
TJ, Tstg
90a
90a
240
75
280
300b
55 to 175
THERMAL RESISTANCE RATINGS
Junction-to-Ambient (Free Air)
Junction-to-Case
Parameter
Notes
a. Package limited.
b. See SOA curve for voltage derating.
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
Symbol
RthJA
RthJC
Limit
62.5
0.5
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SUP90N06-05L Datasheet

N-Channel 60-V (D-S) MOSFET

No Preview Available !

SUP90N06-05L pdf
SUP90N06-05L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
f = 1.0 MHz
VDS = 30 V, VGS = 10 V, ID = 90 A
VDD = 30 V, RL = 0.33 W
ID ^ 90 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 90 A, VGS = 0 V
IF = 90 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
60
V
13
"100
nA
1
50 mA
250
120 A
0.0039
0.0049
0.0044
0.0055
0.0083
W
0.0103
30 S
12900
1060
700
1.3
200
50
33
22
130
110
280
300
35
200
165
420
pF
W
nC
ns
90
A
240
1.1 1.5 V
55 82 ns
3.6 5.4 A
0.1 0.22 mC
www.vishay.com
2
Document Number: 73037
S-41504—Rev. A, 09-Aug-04


Part Number SUP90N06-05L
Description N-Channel 60-V (D-S) MOSFET
Maker Vishay
Total Page 5 Pages
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