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Vishay Intertechnology Electronic Components Datasheet

VS-VSKDU162-12PbF Datasheet

Ultrafast Diodes

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VS-VSKDU162-12PbF pdf
www.vishay.com
VS-VSKDU162/12PbF
Vishay Semiconductors
HEXFRED® Ultrafast Diodes, 100 A
(New INT-A-PAK Power Modules)
New INT-A-PAK
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC
Package
Circuit
1200 V
2.5 V
150 ns
110 A at 100 °C
INT-A-PAK
Two diodes doubler circuit
FEATURES
• Electrically isolated: DBC base plate
• Standard JEDEC® package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style New INT-A-PAK
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
Single pulse forward current
IFSM
Maximum power dissipation
PD
RMS isolation voltage
Operating junction and storage
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Limited by junction temperature
TC = 25 °C
TC = 100 °C
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
1200
205
110
800
695
280
3500
-40 to + 150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 μA
1200
Maximum forward voltage
IF = 100 A
VFM
IF = 160 A
-
-
Maximum reverse leakage current IRM TJ = 150 °C, VR = 1200 V
-
TYP.
-
2.5
2.9
18
MAX. UNITS
-
3.2 V
3.9
30 mA
Revision: 11-Apr-14
1 Document Number: 94512
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

VS-VSKDU162-12PbF Datasheet

Ultrafast Diodes

No Preview Available !

VS-VSKDU162-12PbF pdf
www.vishay.com
VS-VSKDU162/12PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Peak rate of recovery current
trr
IRRM
Qrr
dI(rec)M/dt
TJ = 25 °C
TJ = 25 °C
TJ = 25 °C
TJ = 25 °C
IF = 160 A
dIF/dt = 200 A/μs
VR = 200 V
-
-
-
-
150
20
2000
-
MAX.
200
22
2400
300
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating and
storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface flat, smooth and greased
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
Approximate weight
Case style
VALUES
- 40 to 150
UNITS
°C
0.18
°C/W
0.05
4
Nm
6
200 g
7.1 oz.
New INT-A-PAK
1000
100
TJ = 150 °C
10 TJ = 25 °C
1
012345678
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
150 °C
10
1
0.1
0.01 25 °C
0.001
200 400 600 800 1000 1200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 11-Apr-14
2 Document Number: 94512
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number VS-VSKDU162-12PbF
Description Ultrafast Diodes
Maker Vishay
Total Page 6 Pages
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