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Vitesse Semiconductor
Vitesse Semiconductor

VSC7991 Datasheet Preview

VSC7991 Datasheet

SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver

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VSC7991 pdf
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7991
SONET/SDH 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Features
• Maximum Rise/Fall Times of 38ps
• High-Speed Operation
(Up to 10.7Gb/s NRZ Data)
• Differential Inputs
• Single-Supply
• CML-Compatible Data Inputs
• On-Chip 50Input Terminations
• 50Output Impedance
General Description
The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with
direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components
allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50.
Applications
• SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s
VSC7991 Block Diagram
50(1)
DIN
NDIN
50(1)
Note: (1) On-die components.
DCC
VIP
60(1)
60(1)
300(1)
IMOD
NDOUT
DOUT
300(1)
IB
IBN
IP
G52321-0, Rev 2.3
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 1



Vitesse Semiconductor
Vitesse Semiconductor

VSC7991 Datasheet Preview

VSC7991 Datasheet

SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver

No Preview Available !

VSC7991 pdf
www.DataSheet4U.com
VITESSE
SEMICONDUCTOR CORPORATION
SDH/SONET 10.7Gb/s
Electroabsorption Modulator/Laser Diode Driver
Advance Product Information
VSC7991
AC Characteristics (Over recommended operating conditions)
Table 1: High Speed Inputs /Outputs
Symbol
IRL
ORL
Parameter
Input Return Loss, 50System
Output Return Loss, 50System
Min Typ Max Units
Conditions
15 dB 50MHz to 10GHz
12 dB 50MHz to 10GHz
Table 2: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min Typ
tR tF
Jitter
Output Rise and Fall Times
Output Jitter
Overshoot/Undershoot
Duty-Cycle


10
25
Max
38
15
+10
+25
Units
ps
ps/p-p
%
%
Conditions
50load, 20% to 80%, VMOD
= 3V
50Load, VMOD = 3V
DCC in the range of VSS
0.5V to VSS +2V
DC Characteristics (Over recommended operating conditions)
Table 3: Power Dissipation
Symbol
Parameter
IVSS Power Supply Current (VSS)
PD Total Power Dissipation
Min Typ Max Units
Conditions
300
330
mA
VSS = 6.8, RL = 50to GND,
IMOD = 120mA, VBIAS = 0V
2040 2244
mW
VSS = 6.8, RL = 50to GND
IMOD = 120mA, VBIAS = 0V
Table 4: Laser Driver DC Electrical Specifications
Symbol
VBIAS
VMOD
VOCM
IB, IBN
VIP
VIH
VIL
VSW(1)
DCC
Parameter
Programmable Output Offset Voltage
Modulation Voltage Amplitude
Output Voltage Compliance
Laser Bias Control Voltage
Laser Modulation Control Voltage
Input High Voltage
Input Low Voltage
Input Voltage Swing
Duty-Cycle Control
Min Typ Max Units
0.8
0
1.5
3
4
10
0
V
V
V
V
VSS
VSS +
0.7
V
150 0 mV
1.00 0.60
V
450 1000 mVp-p
VSS
0.5V
VSS+
2V
Conditions
NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin.
Page 2
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52321-0, Rev 2.3
02/26/01


Part Number VSC7991
Description SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver
Maker Vitesse Semiconductor
Total Page 10 Pages
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