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Weitron Technology
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WTK6679 Datasheet Preview

WTK6679 Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

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WTK6679 pdf
WTK6679
Surface Mount P-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
* Super high dense
* Cell design for low RDS(ON)
* RDS(ON)<10mΩ@VGS = -10V
* RDS(ON)<13mΩ@VGS = -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
DRAIN CURRENT
-14 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
Description:
The WTK6679 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SOP-8
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
wwwD.DraatianS-hSeoetu4Urc.ceomVoltage
Gate-Source Voltage
Continuous Drain Current (TA =25°C)
(TA =70°C)
Pulsed Drain Current (1)
Power Dissipation
(TA =25°C)
Maximax Junction-to-Ambient
Symbol
VDS
VGS
ID
IDM
PD
R θJA
Value
-30
±25
-14
-8.9
-50
2.5
50
Operating Junction Temperature Range
Storage Temperature Range
TJ
Tstg
+150
-55 to +150
Unite
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTK6679=6679SC
WEITRON
http://www.weitron.com.tw
1/5
03-May-07



Weitron Technology
Weitron Technology

WTK6679 Datasheet Preview

WTK6679 Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

No Preview Available !

WTK6679 pdf
WTK6679
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 μA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 μA
Gate-Source Leakage Current
VDS=0V, VGS=-+25V
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Drain-Source On-Resistance
VGS=-10V, ID=-14A
VGS=-4.5V, ID=-11A
Forward Transconductance
VDS=-10V , ID=-14A
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
RDS (on)
gfs
Min
-30
-1.0
-
-
-
-
-
Typ
-
-
-
-
-
-
26
Max
-
-3.0
±100
-1
-25
10
13
-
Dynamic
Input Capacitance
VDS=-25V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-25V, VGS=0V, f=1MHZ
Ciss - 2860 4580
Coss - 950 -
Crss - 640 -
Switching
Turn-On Delay Time(2)
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
td(on)
-
13
-
wwRwis.DeaTtaimSheeet4U.com
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
tr
- 11
-
Turn-O Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
t)
-
58
-
Fall Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 3.3Ω, RD = 15Ω
tf
- 43
-
Total Gate Charge(2)
VDS=-24V, ID=-14A, VGS=-4.5V
Qg - 37 60
Gate-Source Charge
VDS=-24V, ID=-14A, VGS=-4.5V
Gate-Drain Charge
VDS=-24V, ID=-14A, VGS=-4.5V
Qgs -
3
-
Qgd - 25 -
Forward On Voltage (2)
VGS=0V, IS=-2A
VSD -
- -1.2
Reverse Recovery Time(2)
VGS=0V, IS=-14A,dl/dt=100A/μs
Trr - 48 -
Reverse Recovery Charge
VGS=0V, IS=-14A,dl/dt=100A/μs
Q rr -
46 -
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/5
Unit
V
V
nA
μA
S
PF
nS
nS
nS
nS
nc
nc
nc
V
nS
nC
03-May-07


Part Number WTK6679
Description Surface Mount P-Channel Enhancement Mode MOSFET
Maker Weitron Technology
Total Page 5 Pages
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WTK6679 pdf
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