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WTK9435 Datasheet Preview

WTK9435 Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

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WTK9435 pdf
WTK9435
Surface Mount P-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
* Super high dense
* Cell design for low RDS(ON)
* RDS(ON)<55mΩ@VGS = -10V
* RDS(ON)<90mΩ@VGS = -4.5V
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching
DRAIN CURRENT
-5.3 AMPERES
DRAIN SOURCE VOLTAGE
-30 VOLTAGE
1
Description:
The WTK9435 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SOP-8
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
wwwD.DraatianS-hSeoetu4Urc.ceomVoltage
Symbol
VDS
Value
-30
Gate-Source Voltage
Continuous Drain Current (TA =25°C)
(TA =70°C)
Pulsed Drain Current (1)
VGS
ID
IDM
±16
-5.3
-4.7
-20
Power Dissipation
(TA =25°C)
Maximax Junction-to-Ambient
PD
R θJA
2.5
50
Operating Junction Temperature Range
Storage Temperature Range
TJ
Tstg
+150
-55 to +150
Unite
V
V
A
A
W
°C/W
°C
°C
Device Marking
WTK9435=9435SC
WEITRON
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03-May-07



Weitron Technology
Weitron Technology

WTK9435 Datasheet Preview

WTK9435 Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

No Preview Available !

WTK9435 pdf
WTK9435
Electrical Characteristics (TA=25°C Unless otherwise noted)
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+16V
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
Drain-Source On-Resistance
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Forward Transconductance
VDS=-10V , ID=-5.3A
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
RDS (on)
gfs
Min
-30
-1.0
-
-
-
-
-
Typ
-
-
-
-
-
-
10
Dynamic
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Ciss - 745
Coss - 440
Crss - 120
Switching
Turn-On Delay Time(2)
wwVwD.DS a=ta-S15heVe, tI4DU=.c-o1mA, VGS = -10V, RG = 6Ω, RD = 15Ω
Rise Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω
td(on)
tr
-
-
9
15
Turn-O Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω
td(o )
-
75
Fall Time
VDS = -15V, ID = -1A, VGS = -10V, RG = 6Ω, RD = 15Ω
tf
- 40
Total Gate Charge(2)
VDS=-15V, ID=-5.3A, VGS=-10V
Gate-Source Charge
VDS=-15V, ID=-5.3A, VGS=-10V
Gate-Drain Charge
VDS=-15V, ID=-5.3A, VGS=-10V
Drain-Source Diode Forward Voltage(2)
VGS=0V, IS=-2.6A
Continuous Source Current(Body Diode)
VD=VG=0V, VS=-1.2V
Pulsed Source Current(Body Diode)(1)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
Qg
Qgs
Qgd
VSD
IS
ISM
- 28
-3
-7
- -0.75
--
--
WEITRON
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Max
-
-3.0
±100
-1
-5
55
90
-
Unit
V
V
nA
μA
S
-
- PF
-
- nS
- nS
- nS
- nS
- nc
- nc
- nc
-1.2 V
-2.6 A
-20 A
03-May-07


Part Number WTK9435
Description Surface Mount P-Channel Enhancement Mode MOSFET
Maker Weitron Technology
Total Page 6 Pages
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