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Winsem Technology
Winsem Technology

WTF13007 Datasheet Preview

WTF13007 Datasheet

POWER TRANSISTOR

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WTF13007 pdf
Winsem Technology Corp.
High Voltage NPN Power Transistor
Features
• High Voltage
• High Switch Speed
• BVCEO : 400V
• BVCBO : 700V
• IC : 8A
• VCE(SAT) : 3V @ IC / IB = 8A / 2A
WTX13007 / WTF13007
POWER TRANSISTOR
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation ( TO-220 )
Total Power Dissipation ( TO-220F )
Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. Pw=300uS, Duty≦ 2%
Version A11
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
PD
TJ
TSTG
Max rating
700
400
9
8
16
4
8
75
30
+150
-55 ~ +150
Unit
V
V
V
A
A
A
A
W
W
Page 1



Winsem Technology
Winsem Technology

WTF13007 Datasheet Preview

WTF13007 Datasheet

POWER TRANSISTOR

No Preview Available !

WTF13007 pdf
Winsem Technology Corp.
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
WTX13007 / WTF13007
POWER TRANSISTOR
Parameter
Symbol
Test Condition
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
IC = 1mA, IB=0
IC = 10mA, IE=0
Emitter- Base Breakdown Voltage
BVEBO IE = 1mA, IC=0
Collector Cutoff Current
Collector Cutoff Current
ICEO
ICBO
VCE = 400V, IB=0
VCB = 700V, IE=0
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
DC Current Gain
hFE1
hFE2
VCE = 5V, IC=2A
VCE = 5V, IC=5A
VCE(SAT1) IC =2A, IB =0. 4A
Collector-Emitter Saturation Voltage VCE(SAT2) IC = 5A, IB =1A
VCE(SAT3) IC = 8A, IB =2A
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 2A, IB =0.4A
VBE(SAT2) IC = 5A, IB =1A
Min Typ Max Unit
700 ─
400 ─
9─
──
──
─V
─V
─V
1 mA
1 mA
──
1 mA
20 ─
40
5 ─ 30
──
1
─ ─ 1.5 V
──
3
─ ─ 1.2
V
─ ─ 1.6
Dynamic
Frequency
Output Capacitance
fT VCE = 10V, IC=0.5A
4 ─ ─ MHz
Cob VCB = 10V, f=0.1MHz ─ 180 ─ pF
Resistive Load Switching Time (Ratings)
Delay Time
Rise Time
td Vcc=125V,IC=5A,
tr IB1=1A,IB2=1A,
Storage Time
Fall Time
tSTG
tf
tp=25uS
Duty Cycle ≦ 2%
Note: Pulse test: pulse width ≦ 300uS, duty cycle ≦ 2%
─ 0.06 0.1 uS
─ 0.45 1
uS
─ 2.8 3 uS
0.3 0.7
uS
Version A11
Page 2


Part Number WTF13007
Description POWER TRANSISTOR
Maker Winsem Technology
Total Page 5 Pages
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