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Winsem Technology
Winsem Technology

WTF268 Datasheet Preview

WTF268 Datasheet

High Voltage NPN Transistor

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WTF268 pdf
Winsem Technology Corp.
High Voltage NPN Power Transistor
Features
• High Voltage
• High Switch Speed
• BVCEO : 400V
• BVCBO : 700V
• IC : 4A
• VCE(SAT) : 1.3V @ IC / IB = 2.5A / 0.6A
WTX268 / WTF268
High Voltage NPN Transistor
Application
• Electronic Ballasts
• Adapter
• Lighting
ABSOLUTE MAXIMUM RATINGS ( Ta = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Total Power Dissipation (TO-220)
Total Power Dissipation (TO-220F)
Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single Pulse. Pw=300uS, Duty≦ 2%
Version A10
Symbol
VCBO
VCEO
VEBO
IC
IB
PBtot
TJ
TSTG
Max rating
700
400
9
4
8
2
4
75
30
+150
-55 ~ +150
Unit
V
V
V
A
A
W
Page 1



Winsem Technology
Winsem Technology

WTF268 Datasheet Preview

WTF268 Datasheet

High Voltage NPN Transistor

No Preview Available !

WTF268 pdf
Winsem Technology Corp.
WTX268 / WTF268
High Voltage NPN Transistor
ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
BVCBO
BVCEO
BVEBO
ICEO
ICBO
IC = 1mA, IB=0
IC = 10mA, IE=0
IE = 0.1mA, IC=0
VCE = 400V, IE=0
VCB = 700V, IE=0
700 ─
400 ─
9─
──
──
─V
─V
─V
250 uA
1 mA
Emitter Cutoff Current
IEBO VEB = 9V, IC=0
──
1 mA
DC Current Gain
hFE1
hFE2
VCE = 5V, IC=10mA
VCE = 5V, IC=2.5A
15 ─
8─
32
V
28
VCE(SAT1) IC = 0.8A, IB =0.1A
Collector-Emitter Saturation Voltage
VCE(SAT2) IC = 2.5A, IB =0.6A
─ ─ 1.1
V
─ ─ 1.3
Base-Emitter Saturation Voltage
VBE(SAT1) IC = 1A, IB =0.2A
VBE(SAT2) IC = 2.5A, IB =0.5A
─ ─ 1.2
V
─ ─ 1.3
Turn On Time
Storage Time
Fall Time
ton
tSTG
tf
Vcc = 125V, Ic = 2A,
IB1=1B2=0.4A, tp=25uS
Duty Cycle ≦ 1%
0.2 0.5
2.2 3
0.2 0.5
uS
uS
uS
Dynamic
Parameter
Symbol
Test Condition
Min Typ Max Unit
Frequency
fT VCE = 10V, IC=0.5A
Output Capacitance
Cob VCB = 10V, f=0.1MHz
Note: Pulse test: pulse width ≦ 300uS, duty cycle ≦ 2%
4
──
65 ─
MHz
pF
Version A10
Page 2


Part Number WTF268
Description High Voltage NPN Transistor
Maker Winsem Technology
Total Page 5 Pages
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