http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





Wisdom technologies
Wisdom technologies

WFF1N60 Datasheet Preview

WFF1N60 Datasheet

N-Channel MOSFET

No Preview Available !

WFF1N60 pdf
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFF1 N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 5nC (Typ.)
BVDSS=600V,ID=1A
RDS(on) : 11.5(Max) @VG=10V
100% Avalanche Tested
GD S
D
!
G!
◀▲
!
S
 
TO220F   
GGate,DDrain,SSourse 
 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF1 N60
600
1*
0.6*
±30
50
1
21
-55 ~ +150
300
Thermal Characteristics 
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
5.95
62.5
Unit
V
A
A
V
mJ
A
W
Units
/W
/W
www.wisdom-technologies.com 
 
    Rev.A0,August , 2010 | 
1 
 



Wisdom technologies
Wisdom technologies

WFF1N60 Datasheet Preview

WFF1N60 Datasheet

N-Channel MOSFET

No Preview Available !

WFF1N60 pdf
HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition Min. Typ. Max Units
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μAVGS=0 600 --
--
V
BVDSS/ Breakdown Voltage Temperature
△TJ Conficient
ID=250μA,Reference
to 25
--
0.4
--
V/
IDSS Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
Vds=480V, Tc=125
--
--
1 μA
10 μA
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
-- -- 100 nA 
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
-- -- -100 nA 
On Characteristics 
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=0.5A,Vgs=10V
2 -- 4
V
-- -- 11.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
-- 120 150
-- 20 25
-- 3 4
pF
pF
pF
Switching Characteristics 
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=1A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=1A (Note 3,4)
-- 5 20
-- 25 60
-- 7 25
-- 25 60
-- 5 6
-- 1 --
2.6 --
nS
nS
nS
nS
nC
nC
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes 
Maximun Continuous Drain-Sourse Diode Forward Current
--
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Voltage
Id=2A
--
Reverse Recovery Time
Reverse Recovery Charge
IS=2A,VGS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=55mH, IAS=1.0A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
--
--
--
160
0.3
1
3.6
1.4
--
--
A
A
V
nS
μC
www.wisdom-technologies. com  
    Rev.A0,August , 2010 | 
2 
 


Part Number WFF1N60
Description N-Channel MOSFET
Maker Wisdom technologies
Total Page 6 Pages
PDF Download
WFF1N60 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 WFF1N60 N-Channel MOSFET Wisdom technologies
Wisdom technologies
WFF1N60 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components