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Wisdom technologies
Wisdom technologies

WFP2N60 Datasheet Preview

WFP2N60 Datasheet

N-Channel MOSFET

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WFP2N60 pdf
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFP2N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 8.5nC (Typ.)
BVDSS=600V,ID=2A
RDS(on) : 5 (Max) @VG=10V
100% Avalanche Tested
 
GDS
D
!
G!
◀▲
!
S
 
TO220   
GGate,DDrain,SSourse 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP2N60
600
2
1.5
±30
120
2
54
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
1.95
--
62.5
Units
/W
/W
/W
www.wisdom-technologies .com  
    Rev.A0,August , 2010 | 
1 
 



Wisdom technologies
Wisdom technologies

WFP2N60 Datasheet Preview

WFP2N60 Datasheet

N-Channel MOSFET

No Preview Available !

WFP2N60 pdf
HIGH VOLTAGE N-Channel MOSFET 
Electrical Characteristics Tc=25unless other wise noted 
Symbol
Parameter
Test Condition
Min. Typ.
Off Characteristics
BVDSS
BVDSS/
△TJ
IDSS
IGSSF
IGSSR
Drain-Sourse Breakdown Voltage
Breakdown Voltage Temperature
Conficient
Zero Gate Voltage Drain Current
Gate-body leakage Current,
Forward
Gate-body leakage Current,
Reverse
ID=250μAVGS=0
ID=250μA,Reference
to 25
Vds=600V, Vgs=0V
Vds=480V, Tc=125
Vgs=+30V, Vds=0V
Vgs=-30V, Vds=0V
600 --
-- 0.4
-- --
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=1A,Vgs=10V
2 --
-- --
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25VVGS=0
f=1.0MHz
-- 270
-- 40
-- 5
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
VDD=300VID=2A
RG=25Ω (Note 3,4)
VDS=480,VGS=10V
ID=2A (Note 3,4)
-- 10
-- 25
-- 20
-- 25
-- 90
-- 1.6
4.3
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes 
Maximun Continuous Drain-Sourse Diode Forward Current
--
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Voltage
Id=2A
--
Reverse Recovery Time
Reverse Recovery Charge
IS=2A,VGS =0V
diF/dt=100A/μs (Note3)
--
--
1, L=55mH, IAS=2.0A, VDD=50V, RG=25, Starting TJ =25°C 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width 300μs, Duty Cycle 2%
4, Essentially Independent of Operating Temperature 
--
--
--
180
0.72
Max Units
--
--
1
10
100
-100
V
V/
μA
μA
nA 
nA 
4V
5
350 pF
50 pF
7 pF
30 nS
60 nS
50 nS
60 nS
11 nC
-- nC
-- nC
2A
8A
1.5 V
-- nS
-- μC
www.wisdom-technologies.  com  
    Rev.A0,August , 2010 | 
2 
 


Part Number WFP2N60
Description N-Channel MOSFET
Maker Wisdom technologies
Total Page 6 Pages
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