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Zetex Semiconductors
Zetex Semiconductors

ZXMN6A09K Datasheet Preview

ZXMN6A09K Datasheet

N-channel enhancement mode MOSFET

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ZXMN6A09K pdf
ZXMN6A09K
60V N-channel enhancement mode MOSFET in DPAK
Summary
V(BR)DSS=60V : RDS(on)=0.040; ID=12.2A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
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Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK (T0-252) package
Applications
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
Ordering information
Device
ZXMN6A09KTC
Reel size
(inches)
13
Device marking
ZXMN
6A09K
Tape width
(mm)
16
D
G
S
D
Quantity
per reel
2500
D
GS
Pinout - top view
Issue 5 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com



Zetex Semiconductors
Zetex Semiconductors

ZXMN6A09K Datasheet Preview

ZXMN6A09K Datasheet

N-channel enhancement mode MOSFET

No Preview Available !

ZXMN6A09K pdf
ZXMN6A09K
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @ VGS=10V; Tamb=25°C(b)
@ VGS=10V; Tamb=70°C(b)
@ VGS=10V; Tamb=25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(a)
Linear derating factor
Power dissipation at Tamb =25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
PD
Tj, Tstg
Limit
60
±20
12.2
9.8
7.9
43
10.8
43
4.3
34.4
10.1
80.8
2.15
17.2
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
Limit
29
12.3
58.1
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Issue 5 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXMN6A09K
Description N-channel enhancement mode MOSFET
Maker Zetex Semiconductors
Total Page 8 Pages
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ZXMN6A09K pdf
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