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Zetex Semiconductors
Zetex Semiconductors

ZXTN19100CFF Datasheet Preview

ZXTN19100CFF Datasheet

NPN high gain power transistor

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ZXTN19100CFF pdf
ZXTN19100CFF
100V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 200V
BVCEO > 100V
BVECO > 5V
IC(cont) = 4.5A
VCE(sat) < 60mV @ 1A
RCE(sat) = 38m
PD = 1.5W
Complementary part number ZXTP19100CFF
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Description
Advanced process capability has been used to maximise the
performance of this transistor. The SOT23F package is compatible with
the industry standard SOT23 footprint but offers lower profile and
higher dissipation for applications where power density is of utmost
importance
Features
• High forward blocking voltage
• Low saturation voltage
• High gain
• Low profile high dissipation package
Applications
• Relay and solenoid driving
• DC fans
• Industrial and automotive switching
Ordering information
Device
ZXTN19100CFFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1E5
C
B
E
E
C
B
Pinout - top view
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com



Zetex Semiconductors
Zetex Semiconductors

ZXTN19100CFF Datasheet Preview

ZXTN19100CFF Datasheet

NPN high gain power transistor

No Preview Available !

ZXTN19100CFF pdf
ZXTN19100CFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current(c)
Base current
Peak pulse current
Power dissipation at Tamb = 25°C(a)
Linear derating factor
Power dissipation at Tamb = 25°C(b)
Linear derating factor
Power dissipation at Tamb = 25°C(c)
Linear derating factor
Power dissipation at Tamb = 25°C(d)
Linear derating factor
Operating and storage temperature range
Symbol
VCBO
VCEX
VCEO
VECO
VEBO
IC
IB
ICM
PD
PD
PD
PD
Tj, Tstg
Limit
200
200
100
5
7
4.5
1
6
0.84
6.72
1.34
10.72
1.5
12.0
2
16.0
- 55 to 150
Unit
V
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Junction to ambient(c)
Junction to ambient(d)
Symbol
RJA
RJA
RJA
RJA
Limit
149.3
93.4
83.3
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com


Part Number ZXTN19100CFF
Description NPN high gain power transistor
Maker Zetex Semiconductors
Total Page 8 Pages
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