AAT8107 mosfet equivalent, p-channel power mosfet.
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TrenchDMOS™
VDS(MAX) = -20V ID(MAX)1 = -6.5A @ 25°C Low RDS(ON):
* 35mΩ @ VGS = -4.5V
* 60mΩ @ VGS = -2.5V
Applications
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* Battery P.
and protection in battery packs.
Features
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TrenchDMOS™
VDS(MAX) = -20V ID(MAX)1 = -6.5A @ 25°C Low R.
The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is designed for use as a load switch in battery-powered applications a.
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