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5SDA10D2003 Datasheet Preview

5SDA10D2003 Datasheet

Avalanche Rectifier Diode

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Key Parameters
VRRM
IFAVM
IFSM
VF0
rF
=
=
=
=
=
2300 V
1140 A
13.5 kA
0.83 V
0.30 m
Features
Avalanche Rectifier Diode
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
Optimized for line frequency rectifiers
Low on-state voltage, narrow VF-bands for parallel operation
Self protected against transient overvoltages
Guaranteed maximum avalanche power dissipation
Industry standard housing
Blocking
Part number 5SDA 10D2303
VRRM
2300
VRSM
2530
IRRM
PRSM
5SDA 10D2003
2000
2200
50 mA
70 kW
50 kW
5SDA 10D1703 Condition
1700
f = 50 Hz
1870
tP = 10 ms
VRRM
tP = 20 µs
tP = 20 µs
tP = 10 ms
Tj = 160°C
Tj = 160°C
Tj = 45°C
Tj = 160°C
Mechanical data
FM Mounting force
min.
max.
a Acceleration
Device unclamped
Device clamped
m Weight
DS Surface creepage distance
Da Air strike distance
10 kN
12 kN
50
200
0.25
m/s2
m/s2
kg
30 mm
20.5 mm
ABB Semiconductors AG




ABB

5SDA10D2003 Datasheet Preview

5SDA10D2003 Datasheet

Avalanche Rectifier Diode

No Preview Available !

AwwBwB.DSaetmaSihceoent4dUu.cctoomrs AG
5SDA 10D2303
On-state
IFAVM
IFRMS
IFSM
I2t
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
VF0
rF
VF min
VF max
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
Thermal
Tj Storage and operating
junction temperature range
RthJC
Thermal resistance
junction to case
RthCH
Thermal resistance case to
heat sink
1140 A
1790 A
13.5 kA
14.5 kA
910103 A2s
875103 A2s
0.83 V
0.30 m
1.20 V
1.35 V
Half sine wave, TC = 85°C
tp =
10 ms
tp =
8.3 ms
tp =
10 ms
tp =
8.3 ms
IF = 1000 - 3000 A
IF =
1800 A
-40...160°C
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
Tj = 160°C
After surge:
VR 0V
Tj = 160°C
Tj = 25°C
Analytical function for transient thermal impedance:
4
ZthJC(t) = Ri(1- e-t/τ i )
i=1
i
123
4
R (K/kW)
τi (s)
20.95 10.57 7.15
1.33
0.396 0.072 0.009 0.0044
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
45
40
Zth 35
[K/kW] 30
Fm =10...12 kN
Double Side Cooling
25
20
15
10
5
0
10-3 2 3 4 5 6 7 10-2 2 3 4 5 6 7 10-1 2 3 4 5 5 6 100
t [s]
2 3 4 5 6 7 101
IFAVM = -VF0 +
(VF0)2 + 4 * f 2 * rf * P
2 * f 2 *rf
where P = TJ max - TC or P = TJ max - TA
Rthjc
Rthja
IFAVM (A)
T max (°C)
Rthja (K/kW)
f2 = 1
2.5
3.1
6
P (W)
Tc (°C)
RthJC (K/kW)
VF0 (V)
Ta (°C)
for DC current
for half-sine wave
for 120°el., sine
for 60° el., sine
rF ()
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Doc. No. 5SYA 1120 - 01 Apr-98


Part Number 5SDA10D2003
Description Avalanche Rectifier Diode
Maker ABB
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