900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






ABB

5SHY35L4510 Datasheet Preview

5SHY35L4510 Datasheet

Asymmetric Integrated Gate- Commutated Thyristor

No Preview Available !

VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
4500 V
4000 A
32×103 A
1.4 V
0.325 m
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
High snubberless turn-off rating
Optimized for medium frequency (<1 kHz) and
wide temperature range
www.DataSheet4U.com
High reliability
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Contact factory for series connection
Doc. No. 5SYA1232-02 June 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Permanent DC voltage for
100 FIT failure rate of GCT
Symbol
VDRM
VDC-link
Conditions
Gate Unit energized
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
Reverse voltage
Characteristic values
Parameter
Rep. peak off-state current
VRRM
Symbol
IDRM
IGCT in
off-state
on-state
Conditions
VD = VDRM, Gate Unit energized
min
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
min
36
min
25.3
Weight
m
Surface creepage distance
Air strike distance
Length
Ds
Da
l
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
typ
typ
40
typ
85
439
40
173
max
4500
2800
Unit
V
V
17 V
10 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




ABB

5SHY35L4510 Datasheet Preview

5SHY35L4510 Datasheet

Asymmetric Integrated Gate- Commutated Thyristor

No Preview Available !

GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
Max. RMS on-state current IT(RMS)
Max. peak non-repetitive
surge on-state current
Limiting load integral
ITSM
I2t
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Max. peak non-repetitive
surge on-state current
Limiting load integral
www.DataSheeSt4tUra.cyominductance between
GCT and antiparallel diode
ITSM
I2t
LD
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Only relevant for applications with
antiparallel diode to the IGCT
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr
For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
Symbol Conditions
On-state voltage
Threshold voltage
Slope resistance
VT
V(T0)
rT
IT = 4000 A, Tj = 125 °C
Tj = 125 °C
IT = 1000...4000 A
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Critical rate of rise of on-
state current
Characteristic values
Parameter
diT/dtcr f = 0..500 Hz, Tj = 125 °C,
VD = 2800 V, ITM 4000 A
Symbol Conditions
Turn-on delay time
Turn-on delay time status
feedback
Rise time
Turn-on energy per pulse
tdon
tdon SF
tr
Eon
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
Characteristic values
Parameter
ITGQM
VDM VDRM, Tj = 125°C,
VD = 2800 V, RS = 0.65 ,
CCL = 10 µF, LCL 0.3 µH
Symbol Conditions
Turn-off delay time
Turn-off delay time status
feedback
Turn-off energy per pulse
tdoff
tdoff SF
Eoff
VD = 2800 V, Tj = 125 °C
VDM VDRM, RS = 0.65
ITGQ = 4000 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
min
min
min
min
min
min
5SHY 35L4510
typ max Unit
1700 A
2670
32×103
A
A
5.12×106 A2s
21×103 A
6.62×106 A2s
300 nH
200 A/µs
typ max Unit
2.35 2.7 V
1.4 V
0.325 m
typ max Unit
1000 A/µs
typ max Unit
3.5 µs
7 µs
1 µs
1.5 J
typ max Unit
4000 A
typ max Unit
7 µs
7 µs
19.5
22 J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
page 2 of 9


Part Number 5SHY35L4510
Description Asymmetric Integrated Gate- Commutated Thyristor
Maker ABB
PDF Download

5SHY35L4510 Datasheet PDF





Similar Datasheet

1 5SHY35L4510 Asymmetric Integrated Gate- Commutated Thyristor
ABB
2 5SHY35L4511 Asymmetric Integrated Gate- Commutated Thyristor
ABB
3 5SHY35L4512 Asymmetric Integrated Gate- Commutated Thyristor
ABB





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy