The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
VCE IC
= =
1200 V 150 A
IGBT-Die
5SMX 12M1273
Die size: 13.6 x 13.6 mm
Doc. No. 5SYA1637-00 July 06
• Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area
Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA
www.DataSheet4U.com Junction temperature
1)
1)
Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C
min
max 1200 150 300
Unit V A A V µs °C
-20
20 10
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMX12M1273 Datasheet
