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5SMX12M6500 Datasheet PDF

ABB 5SMX12M6500

IGBT-Die

Part No. 5SMX12M6500
Datasheet 5SMX12M6500 Download
Manufacturer
ABB
Description IGBT-Die
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5SMX12M6500 datasheet page 1 preview
VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05
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● Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 4400 V, VCEM ≤ 6500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 6500 25 50 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M6500 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate...
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