5SMX12M1273 Overview
VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 5SYA1637-00 July 06 Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA .. Turn-off switching energy Eoff Short circuit current 2) ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 900 V, VCEM ≤...