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5SMX12M1273 Datasheet PDF

ABB 5SMX12M1273

IGBT-Die

Part No. 5SMX12M1273
Datasheet 5SMX12M1273 Download
Manufacturer
ABB
Description IGBT-Die
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5SMX12M1273 datasheet page 1 preview
VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06
● Low loss thin IGBT die
● Highly rugged SPT design
● Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 150 300 Unit V A A V µs °C -20 20 10 -40 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M1273 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Rev...
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