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S-576BNH9B-L3T2U - BIPOLAR HALL EFFECT LATCH

Key Features

  • Uses a thin (t0.80 mm max. ) TSOT-23-3S or ultra-thin (t0.50 mm max. ) HSNT-6(2025) package, allowing for device miniaturization.
  • Contributes to reduction of mechanism operation dispersion with high-accuracy magnetic characteristics (Typ. value ± 1.0 mT) (Refer to ".
  • Magnetic Characteristics" for details. ).
  • Contributes to device safe design with a built-in output current limit circuit.
  • Specifications.

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S-576BNH1B-L3T2U BIPOLAR HALL EFFECT LATCH
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S-576B B Series www.ablic.com © ABLIC Inc., 2019-2023 125°C OPERATION, HIGH-WITHSTAND VOLTAGE, HIGH-SPEED, BIPOLAR HALL EFFECT LATCH IC Rev.1.5_00 This IC, developed by CMOS technology, is a high-accuracy Hall effect latch IC that operates with high temperature and high-withstand voltage. The output voltage level changes when this IC detects the intensity level of magnetic flux density and a polarity change. Using this IC with a magnet makes it possible to detect the rotation status in various devices. ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period and development costs.