ACE2341 Datasheet | ACE Technology

Description P-Channel Enhancement Mode MOSFET The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features - - - - - - - - - - - - - -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -20 ±12 -4.0 -2.8 -12 -1.0 1.25 0.8 V V A A A W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 ℃ -55/150 ℃ 140 ℃/W VER 1.2 .. Technology Packaging Type SOT-23-3 P-Channel Enhancement Mode MOSFET Pin 1 2 3 1 2 Description Gate Source Drain Ordering information Selection Guide ACE2341 XX + H Halogen - free Pb - free BM: SOT-23-3 VER 1.2 .. Technology Electrical Characteristics...