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ACE2341 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Datasheet preview – ACE2341

Datasheet Details

Part number ACE2341
Manufacturer ACE Technology
File Size 292.32 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE2341 Datasheet
Additional preview pages of the ACE2341 datasheet.

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www.DataSheet4U.com ACE2341 Technology Description P-Channel Enhancement Mode MOSFET The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • • -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.
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