ACE2600B - Dual N-Channel Enhancement Mode Field Effect Transistor

ACE Technology

Datasheet Details

Part number	ACE2600B
Manufacturer	ACE Technology
File Size	446.47 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	ACE2600B-ACETechnology.pdf

The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS(V)=20V.
ID=6A (VGS=4.5V).
RDS(ON)＜22mΩ (VGS=4.5V).
RDS(ON)＜26mΩ (VGS=2.5V).
RDS(ON)＜34mΩ (VGS=1.8V).
ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous).
AC TA=25 OC TA=70 OC VDSS VGSS ID 20 V ±8 V 6 4.8 A Drain Current (Pulse).
B IDM 30 Power Dissipation TA=25 OC TA=70 OC PD 1.3 W 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Pack.

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Published: Apr 1, 2016 |