ACE2600B Datasheet - ACE Technology

Dual N-Channel Enhancement Mode Field Effect Transistor

* VDS(V)=20V

* ID=6A (VGS=4.5V)

* RDS(ON)＜22mΩ (VGS=4.5V)

* RDS(ON)＜26mΩ (VGS=2.5V)

* RDS(ON)＜34mΩ (VGS=1.8V)

* ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)

* AC TA=25 OC TA

ACE2600B

ACE Technology

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Dual n-channel enhancement mode field effect transistor.

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