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* 30V/5.4A, RDS(ON)=38mΩ@VGS=10V 30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V 30V/3.8A, RDS(ON)=55mΩ@VGS=.

N-Channel Enhancement Mode MOSFET The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.

ACE3401

ACE3401D

ACE3413

ACE345

ACE3000

ACE3000T

ACE301

ACE302

ACE303

ACE3600

ACE3926E

ACE-3600

ACE-716