ACE3401 Datasheet - ACE Technology

P-Channel Enhancement Mode MOSFET

ACE3401 Features

* -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-re

ACE3401 General Description

P-Channel Enhancement Mode MOSFET The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited.

ACE3401 Datasheet (205.76 KB)

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ACE3401

Manufacturer:

ACE Technology

File Size:

205.76 KB

Description:

P-channel enhancement mode mosfet.

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ACE3401 P-Channel Enhancement Mode MOSFET ACE Technology

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