p-channel enhancement mode mosfet.
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-30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V -30V/-1.2A, RDS(ON)=75mΩ@VG.
P-Channel Enhancement Mode MOSFET
The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state.
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