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ACE3401D
P-Channel Enhancement Mode Field Effect Transistor
Description This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.
Features
VDS(V)=-30V, ID=-3A RDS(ON)<63mΩ @ VGS=-10V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TA=25 OC TA=70 OC
VDSS
-30 V
VGSS ±12 V
-3
ID
A -2.