ACE4922 Datasheet Dual N-Channel Enhancement Mode MOSFET

Manufacturer: ACE Technology

ACE4922 dual n-channel enhancement mode mosfet by ACE Technology - Datasheet Preview

Datasheet Details

Part number	ACE4922
Manufacturer	ACE Technology
File Size	567.99 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Download	ACE4922 Download (PDF)

General Description

The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

Overview

ACE4922 Dual N-Channel Enhancement Mode MOSFET.

Key Features

N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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