* N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely l.

such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.

The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swit.

ACE4922BEM

ACE4908A

ACE4940M

ACE4953B

ACE4000

ACE4010M

ACE4054

ACE4101

ACE431S

ACE432

ACE432A

ACE4722

ACE-3600