ACE4922 Datasheet - ACE Technology

Dual N-Channel Enhancement Mode MOSFET

ACE4922 Features

* N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability Application

* Power Management in Note book

ACE4922 General Description

The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly .

ACE4922 Datasheet (567.99 KB)

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Part number:

ACE4922

Manufacturer:

ACE Technology

File Size:

567.99 KB

Description:

Dual n-channel enhancement mode mosfet.

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ACE4922 Dual N-Channel Enhancement Mode MOSFET ACE Technology

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ACE4922 Features

ACE4922 General Description

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