ACE Technology ACE4922BEM
The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.| Part No. | ACE4922BEM |
|---|---|
| Datasheet | ACE4922BEM Download |
| Manufacturer |  ACE Technology |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
● Low On-Resistance● Fast Switching Speed
● Low-voltage drive
● Easily designed drive circuits
● Pb-Free Package is available. The suffix G means Pb-free package
● ESD Protected：2000V Packaging Type SOT-363 6 54 D1 G2 S2 S1 G1 D2 1 23 Ordering information ACE4922BEM+ H Halogen - free Pb - free EM : SOT-363 VER 1.1 1 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Reverse Drain Current Continuous Pulsed Total Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDP*1 IDR IDR*1 Pd*2 Tch Tstg 60 ±20 115 800 115 800 225 150 -55 to150 V V mA mA mW OC OC Note: 1. Pw≦10µs, Duty cycle≦1 %。 2. When mounted on a 1*0.75*0.062 inch glass epoxy board。 Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS(Note 2) Drain-Source Breakdown Vol...
