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ACE4922BEM - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number ACE4922BEM
Manufacturer ACE Technology
File Size 654.34 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE4922BEM Datasheet

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ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS  Low On-Resistance  Fast Switching Speed  Low-voltage drive  Easily designed drive circuits  Pb-Free Package is available.