ACE Technology ACE4908A
The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.| Part No. | ACE4908A |
|---|---|
| Datasheet | ACE4908A Download |
| Manufacturer |  ACE Technology |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter VER 1.1 1
ABSOLUTE MAXIMUM RATINGS
ACE4908A Dual P-Channel Enhancement Mode MOSFET Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150℃) TA=25 OC TA=70 OC ID -1.0 A -0.7 Pulse Drain Current IDM -3 A Continuous Source Current(Diode Conduction) Power Dissipation TA=25 OC TA=70 OC Operating and Storage Temperature Range IS -0.6 0.35 PD W 0.19 TJ,TSTG -55 to 150 OC T ≤ 10sec Thermal Resistance-Junction to Ambient Steady State RθJA 360 OC/W 400 Packaging Type SOT-363(SC-70-6) P- channel P- channel Pin Symbol Descrip...
