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ACE4908A - Dual P-Channel Enhancement Mode MOSFET

General Description

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ACE4908A
Manufacturer ACE Technology
File Size 421.80 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE4908A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE4908A Dual P-Channel Enhancement Mode MOSFET Description The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.