ACE Technology ACE4922
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.| Part No. | ACE4922 |
|---|---|
| Datasheet | ACE4922 Download |
| Manufacturer |  ACE Technology |
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability Application
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID 1.2 A 0.9 Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation TA=25℃ TA=70℃ PD 0.35 W 0.19 Operating Junction Temperature TJ -55/150 OC Storage Temperature Range TSTG -55/150 OC VER 1.3 1 Packaging Type SC-70-6 654 123 ACE4922 Dual N-Channel Enhancement Mode MOSFET SC-70-6DESCRIPTION
1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1 N-Channel N-Channel Ordering information ACE4922 XX + H Halogen - free Pb - free HM : SC-70-6 VER 1.3 2ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted.
