ACE Technology ACE4953B
The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | ACE4953B |
|---|---|
| Datasheet | ACE4953B Download |
| Manufacturer |  ACE Technology |
| Description | Dual P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● VDS(V)=-20V● ID=-5.5A (VGS=-10V)
● RDS(ON)<55mΩ (VGS=-10V)
● RDS(ON)<58mΩ (VGS=-4.5V)
● RDS(ON)<80mΩ (VGS=-2.5V)
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.5 A -4.4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 VER 1.2 1 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE4953B XX + H Halogen - free Pb - free FM : SOP-8ELECTRICAL CHARACTERISTICS
TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On-State Resistance Gate Threshold Voltage V(BR)DSS IDSS IGSS RDS(ON) VGS(th) VGS=0V, ID=-250uA VDS=-20V, VGS=0V VGS=±12V, VDS=0V VGS=-10V, ID=-6A VGS=-4.5V, I...
