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ACE4953B - Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS(V)=-20V.
  • ID=-5.5A (VGS=-10V).
  • RDS(ON).

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Datasheet Details

Part number ACE4953B
Manufacturer ACE Technology
File Size 778.74 KB
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE4953B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-20V  ID=-5.5A (VGS=-10V)  RDS(ON)<55mΩ (VGS=-10V)  RDS(ON)<58mΩ (VGS=-4.5V)  RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) * AC TA=25 OC TA=70 OC VDSS VGSS ID -20 V ±12 V -5.5 A -4.4 Drain Current (Pulse) * B IDM -25 A Power Dissipation TA=25 OC TA=70 OC PD 2 W 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 VER 1.