Datasheet4U Logo Datasheet4U.com

SSC8132GN6 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Pin configuration Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8132GN6

Key Features

  • s.

📥 Download Datasheet

Datasheet Details

Part number SSC8132GN6
Manufacturer AFSEMI
File Size 511.03 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8132GN6 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSC8033GS3 P-Channel Enhancement Mode MOSFET SPIRIT-SEMI
SSC8035GS6 P-Channel MOSFET VBsemi
SSC-AM101 CHIP LED DEVICE Seoul Semiconductor
SSC-AWT722 TOP LED DEVICE Seoul Semiconductor
SSC-CMX2 Clip Addressable Output Module Firesense

Other Datasheets by AFSEMI

Part Number Description
SSC8131GS6 P-Channel Enhancement Mode MOSFET
SSC8131GS6A P-Channel Enhancement Mode MOSFET
SSC8136GT4 N-Channel Enhancement Mode MOSFET
SSC8138GT4 N-Channel Enhancement Mode MOSFET
SSC8138GT8 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSC8132GN6 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 1.7mR@10V 2.5mR@4V5 ID 100A  Load Switch  Portable Devices  DCDC conversion  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Pin configuration  Package Information Package:DFN5x6 SSC-V1.0 http://www.afsemi.