SSC8136GT4
SSC8136GT4 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS 30V
VGS ±20V
RDSon TYP 3.5m R@10V 4.8m R@4V5
ID 106A
- Applications
- Desktop puter
- Notebook
- DC-DC converter
- Pin configuration
- General Description
Top View
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Package Information
SSC-V1.0
Unit: mm TO220 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
ID IDM
Total Power Dissipation (Note 1)
TC=25°C TC=25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
- Electrical Characteristics @ TA = 25°C unless otherwise noted
Limit 30 ±20 106 500 300 150
-55 to 150
Unit V V A A W W °C
Parameter
Symb...
