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SSC8136GT4 - N-Channel Enhancement Mode MOSFET

General Description

excellent RDS(ON) and low gate charge.

suitable for use as a load switch or in PWM applications.

Package Information SSC-V1.0 Unit: mm TO220 http://www.afsemi.com 1/5 Analog Future SSC8136GT4

Key Features

  • s VDS 30V VGS ±20V RDSon TYP 3.5mR@10V 4.8mR@4V5 ID 106A.

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Datasheet Details

Part number SSC8136GT4
Manufacturer AFSEMI
File Size 88.52 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8136GT4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8136GT4 N-Channel Enhancement Mode MOSFET  Features VDS 30V VGS ±20V RDSon TYP 3.5mR@10V 4.8mR@4V5 ID 106A  Applications  Desktop Computer  Notebook  DC-DC converter  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. S D G  Package Information SSC-V1.0 Unit: mm TO220 http://www.afsemi.