AFSEMI SSC8132GN6
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.| Part No. | SSC8132GN6 |
|---|---|
| Datasheet | SSC8132GN6 Download |
| Manufacturer | AFSEMI |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
●APPLICATIONS
VDS 30V VGS ±20V RDSon TYP 1.7mR@10V 2.5mR@4V5 ID 100A● Load Switch
● Portable Devices
● DCDC conversion
●
GENERAL DESCRIPTION
● Pin configuration● Package Information Package:DFN5x6 SSC-V1.0 1/5 Analog Future SSC8132GN6
ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage Drain Current(note1) Continuous Pulse Drain Current TA = 25°C Power Dissipation(note2) TA = 25°C Power Dissipation (note3) TA = 25°C TA = 70°C Operating and Storage Junction Temperature Range VDSS VGSS ID IDM IDSM PD PDSM TJ, TSTG 30 ±20 100 360 28 83 2.3 1.5 -55 to +150 V V A A W W °C Note1. The maximum current rating is
