SSC8132GN6
SSC8132GN6 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- Applications
VDS 30V
VGS ±20V
RDSon TYP 1.7m R@10V 2.5m R@4V5
ID 100A
- Load Switch
- Portable Devices
- DCDC conversion
- General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Pin configuration
- Package Information
Package:DFN5x6
SSC-V1.0 http://.afsemi.
1/5
Analog Future
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current(note1)
Continuous Pulse
Drain Current TA = 25°C Power Dissipation(note2)
TA = 25°C
Power Dissipation (note3)
TA = 25°C TA = 70°C
Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM IDSM PD
PDSM
TJ, TSTG
30 ±20 100 360 28 83 2.3 1.5 -55 to +150
V V A A W W °C
Note1. The maximum current rating...
