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AFSEMI

SSC8424GT3 Datasheet Preview

SSC8424GT3 Datasheet

N-Channel Enhancement Mode MOSFET

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SSC8424GT3
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
10mR@4V5
ID
Applications
Load Switch
Portable Devices
DCDC Conversion
20V ±8V
12mR@2V5
16mR@1V8
20A
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future




AFSEMI

SSC8424GT3 Datasheet Preview

SSC8424GT3 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SSC8424GT3
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
20
±8
20
50
25
-55 to +150
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V(BR)DSS VGS = 0 V, ID = 250uA
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±8 V, VDS = 0 V
ON CHARACTERISTICS(2)
20 --
-- --
-- --
Gate Threshold Voltage
Static Drain–Source On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 50uA
VGS = 4.5 V, ID = 5 A
RDS(ON) VGS = 2.5 V, ID = 3.5 A
VGS = 1.8 V, ID = 2.8 A
GFS VDS = 5 V, ID = 3.6 A
DYNAMIC CHARACTERISTICS
0.4 0.6
-- 10
-- 12
-- 16
27
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
-- 925
-- 160
-- 100
Turn–On Delay Time
TD(ON)
-- --
Turn–On Rise Time
Turn–Off Delay Tim
TR
TD(OFF)
VDD = 5 V, ID = 3.6A,
VGS =4.5 V,RGEN=6R
-- --
-- --
Turn–Off Fall Time
TF
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
0.6 0.8
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2.
SSC-V1.0
http://www.afsemi.com
Unit
V
V
A
W
°C
Max Unit
--
1
±100
V
uA
nA
0.85
11
15
20
14
V
mR
S
--
-- pF
--
15
80
nS
60
25
1.15 V
2/4
Analog Future


Part Number SSC8424GT3
Description N-Channel Enhancement Mode MOSFET
Maker AFSEMI
Total Page 4 Pages
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