SSC8428GSB
SSC8428GSB is Dual N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS 20V ±12V
RDSon TYP 13m R@10V 15m R@4V5
ID 7.5A
- Applications
- Li-ion battery protection
- Load switch
- Pin configuration
Top View
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current
- General Description
The SSC8428GSB bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
SOT23-6
- Package Information
⑥ ⑤④
①②
③
SSC-1V0
Units:mm SOT23-6L http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Currentnote1
TA=25℃ TA=100℃
Pulsed Drain Current Total Power...
