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SSC8428GSB - Dual N-Channel Enhancement Mode MOSFET

General Description

The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www.afsemi.com 1/5

Key Features

  • s VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A.

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Datasheet Details

Part number SSC8428GSB
Manufacturer AFSEMI
File Size 318.89 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8428GSB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8428GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A  Applications  Li-ion battery protection  Load switch  Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. SOT23-6  Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www.afsemi.