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SSC8428JN3 - Dual N-Channel Enhancement Mode MOSFET

General Description

The SSC8428JN3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Package Information SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8428JN3

Key Features

  • s VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 8A.

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Datasheet Details

Part number SSC8428JN3
Manufacturer AFSEMI
File Size 350.23 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8428JN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8428JN3 Dual N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 8A  Applications  Li-ion battery protection  Load switch  Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428JN3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. DFN3X2  Package Information SSC-1V0 http://www.afsemi.