SSC9926GS1 - Dual N-Channel Enhancement Mode MOSFET

General Description

This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Package Information Applicati

Key Features

s.
VDS VGS 20V ±12V RDSon TYP 21mR@4V5 22mR@3V8 26mR@2V5 ID 6A.
General.

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SSC9926GS1 dual n-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC9926GS1
Manufacturer	AFSEMI
File Size	195.69 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	SSC9926GS1 Datasheet

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SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 21mR@4V5 22mR@3V8 26mR@2V5 ID 6A   General Description This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.  Package Information Applications  Li-ion battery;  Load swich;  Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.