SSC9926GS1 - Dual N-Channel Enhancement Mode MOSFET

SSC9926GS1 Datasheet Preview — Preview of SSC9926GS1 PDF

Datasheet Details

Part number	SSC9926GS1
Manufacturer	AFSEMI
File Size	195.69 KB
Description	Dual N-Channel Enhancement Mode MOSFET
Datasheet	SSC9926GS1-AFSEMI.pdf

SSC9926GS1 Product details

Description

This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. Package Information Applications Li-ion battery; Load swich; Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future S

Features

s.
VDS VGS 20V ±12V RDSon TYP 21mR@4V5 22mR@3V8 26mR@2V5 ID 6A.
General.

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Published: Dec 15, 2018 |