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AFSEMI

SSCE5V032D3 Datasheet Preview

SSCE5V032D3 Datasheet

TVS Diodes

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SSCE5V032D3
SSCE5V032D3 Lo BVV
Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection
Description
PIN configuration
The SSCE5V032D3 is designed with Panjing
Punch-Through process TVS technology to protect voltage
sensitive components from ESD. Excellent clamping
capability,low leakage,and fast response time provide best in
class protection on designs that are exposed to ESD.Because
of its small size,it is suited for use in cellular phones,MP3
players,digital cameras and many other portable applications
where board space comes at a premium.Also because of its
low capacitance,it is suited for use in high frequency designs
such as USB 2.0 high speed,VGA,DVI,SDI and other high
speed line applications.
It has been specifically designed to protect sensitive
components which are connected to data and transmission
lines from overvoltage caused by ESD(electrostatic
discharge),and EFT(electrical fast transients).
Applications
High Speed Line:USB1.0/2.0,VGA,DVI,SDI,
Serial and Parallel Ports
Notebooks,Desktops,Servers
Projection TV
Cellular handsets and accessories
Portable instrumentation
Peripherals
Feature
Peak Power Dissipation−60 W(8 x 20 us Waveform)
Stand-off Voltage:5.0 V
Replacement for MLV(0603)
Protects I/O Port
Low Clamping Voltage
Low Leakage
Low Capacitance
Low capacitance(<6.0pF)for high-speed interfaces
No insertion loss to 1.0GHz
R insertion loss to 1.0GHz
Meets MSL 1 Requirements
ROHS compliant
Solid-state Punch-Through TVS Process technology
Panjing technology
Machanical data
Lead finish:100%matte Sn(Tin)
Mounting position:Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating:7~17 um
Pin flatness:≤3mil
Protection solution to meet
IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
IEC61000-4-4(EFT)40A(5/50ns)
SSC-V1.0
www.afsemi.com
1/5
Analog Future




AFSEMI

SSCE5V032D3 Datasheet Preview

SSCE5V032D3 Datasheet

TVS Diodes

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Electronic Parameter
Symbol
VRWM
VPT
VSB
VC
IT
IRM
IPP
CO
CJ
Parameter
Working Peak Reverse Voltage
Punch-Through Voltage@ IPT
Snap-Back Voltage@ ISB
Clamping Voltage @ IPP
Test Current
Leakage current at VRWM
Peak pulse current
Off-state Capacitance
Junction Capacitance
SSCE5V032D3
VSB
VC VPT
VRWM
I
IPP
ISB
IPT
IR
IR
IPT
ISB
IPP
VRWM VPT VC
VSB
V
Absolute maximum rating@TA=25
Symbol
PPPP
TL
TJ
TSTG
TL
Parameter
Peak Pulse Power(tp=8/20μs waveform)
ESD Rating per IEC61000-4-2Contact
Air
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Lead Solder Temperature−Maximum(10 Second
Duration)
Value
60
8
15
260(10 sec.)
-55~150
-55~150
260
Units
Watts
KV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
*Other voltages may be available upon request.
1. Non-repetitive current pulse, per Figure 1.
Electrical Characteristics@TA=25
Device
SSCE5V032D3
VRWM
(V)
5.0
IR@VRWM
(uA)
Typ Max
0.05 1
Junction capacitance is measured in VR=0V,F=1MHz
VSB@50 mA
(Volts)
Min
5.2
SSC-V1.0
www.afsemi.com
VC
@1 A
(V)
9.0
Capacitance
@VR=2 V,1 MHz(pF)
Typ
3
2/5
Analog Future


Part Number SSCE5V032D3
Description TVS Diodes
Maker AFSEMI
Total Page 5 Pages
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