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AFSEMI

SSCE5V011N7 Datasheet Preview

SSCE5V011N7 Datasheet

Ultra Low Capacitance Array

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SSCE5V011N7
SSCE5V011N7
Lo BVV
Ultra Low Capacitance Array for ESD Protection
Description
The SSCE5V011N7 provides a typical line to line
capacitance of 0.3pF between I/O pins and low insertion
loss up to 3GHz providing greater signal integrity making it
ideally suited for HDMI applications, such as Digital TVs, DVD
players, Computing, set-top boxes and MDDI applications in
mobile computing devices.
It has been specifically designed to protect sensitive
components which are connected to high-speed data and
transmission lines from overvoltage caused by
ESD(electrostatic discharge), CDE (Cable Discharge
Events),and EFT (electrical fast transients).
Feature
150W peak pulse power (tP = 8/20μs)
DFN2510 Package
Working voltage: 5V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact)
PIN configuration
Topview
Applications
DVI & HDMI Port Protection
Serial and Parallel Ports
Projection TV
Notebooks, Desktops, Server
USB 1.1/2.0/3.0/3.1/OTG
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
www.afsemi.com
1/6
Analog Future




AFSEMI

SSCE5V011N7 Datasheet Preview

SSCE5V011N7 Datasheet

Ultra Low Capacitance Array

No Preview Available !

Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCE5V011N7
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
50
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Diode Forward Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VF
VC
VC
CJ
Conditions
Any I/O to Ground
It = 1mA
Any I/O to Ground
VRWM =5.0V, T=25
IF = 15mA
IPP =1A, tP = 8/20μs
IPP=3.4A, tP = 8/20μs
VR = 0V, f = 1MHz,
between I/O pins
VR = 0V, f = 1MHz,
Min.
6
Typ.
5
0.85
0.25
0.3
SSC-V1.0
www.afsemi.com
Max.
1
1.2
15
15
0.3
0.5
Units
V
V
μA
V
V
pF
2/6
Analog Future


Part Number SSCE5V011N7
Description Ultra Low Capacitance Array
Maker AFSEMI
Total Page 6 Pages
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