AGM1010A-E datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

BVDSS RDSON ID 100V 5.8mΩ 90A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switch.

Application

* Features BVDSS RDSON ID 100V 5.8mΩ 90A
* Advance high cell density Trench technology
* Low RDS(ON).

Description

The AGM1010A-E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features BVDSS RDSON ID 1.

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