AGM12N10D datasheet, mosfet equivalent, AGMSEMI

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Features and benefits

* Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switch.

Application

* Features
* Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A
* Low RDS(ON).

Description

The AGM12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications.
* Features
* Advance high c.

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